Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Electrical Characteristics of the Backgated Bottom-Up Silicon Nanowire FETs
- Authors
- Kim, DukSoo; Jung, YoungChai; Park, MiYoung; Kim, ByungSung; Hong, SuHeon; Choi, MinSu; Kang, MyungGil; Yu, YunSeop; Whang, Dongmok; Hwang, SungWoo
- Issue Date
- 11월-2008
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Back gate; contact resistance; mobility extraction; silicon nanowire (SiNW) FET
- Citation
- IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.7, no.6, pp.683 - 687
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON NANOTECHNOLOGY
- Volume
- 7
- Number
- 6
- Start Page
- 683
- End Page
- 687
- ISSN
- 1536-125X
- Abstract
- We report the electrical characteristics of backgated silicon nanowire (SiNW) FETs at temperatures ranging from 300 to 160 K. The voltage drop along the intrinsic part of the silicon nanowire (SiNW) was obtained by modeling the source/drain contacts as Schottky diodes. The field effect mobility values obtained from the extracted intrinsic voltage drop showed activation behaviors in the given temperature range. The activation energy was smaller than that of previously reported Ge nanowires.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.