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Enhanced field emission properties of vertically aligned double-walled carbon nanotube arrays

Authors
Chen, GuohaiShin, Dong HoonIwasaki, TakayukiKawarada, HiroshiLee, Cheol Jin
Issue Date
15-10월-2008
Publisher
IOP PUBLISHING LTD
Citation
NANOTECHNOLOGY, v.19, no.41
Indexed
SCIE
SCOPUS
Journal Title
NANOTECHNOLOGY
Volume
19
Number
41
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/122552
DOI
10.1088/0957-4484/19/41/415703
ISSN
0957-4484
Abstract
Vertically aligned double-walled carbon nanotube (VA-DWCNT) arrays were synthesized by point-arc microwave plasma chemical vapor deposition on Cr/n-Si and SiO2/n-Si substrates. The outer tube diameters of VA-DWCNTs are in the range of 2.5 -3.8 nm, and the average interlayer spacing is approximately 0.42 nm. The field emission properties of these VA-DWCNTs were studied. It was found that a VA-DWCNT array grown on a Cr/n-Si substrate had better field emission properties as compared with a VA-DWCNT array grown on a SiO2/n-Si substrate and randomly oriented DWCNTs, showing a turn-on field of about 0.85 V mu m(-1) at the emission current density of 0.1 mu A cm(-2) and a threshold field of 1.67 V mu m(-1) at the emission current density of 1.0 mA cm(-2). The better field emission performance of the VA-DWCNT array was mainly attributed to the vertical alignment of DWCNTs on the Cr/n-Si substrate and the low contact resistance between CNTs and the Cr/n-Si substrate.
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