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Highly Sensitive, Photocontrolled, Organic Thin-Film Transistors Using Soluble Star-shaped Conjugated Molecules

Authors
Cho, Mi YeonKim, Su JinHan, Yoon DeokPark, Dong HyukKim, Kyung HwanChoi, Dong HoonJoo, Jinsoo
Issue Date
9-Oct-2008
Publisher
WILEY-V C H VERLAG GMBH
Keywords
FIELD-EFFECT TRANSISTORS; SEMICONDUCTOR; RELAXATION; POLYMERS; CELLS
Citation
ADVANCED FUNCTIONAL MATERIALS, v.18, no.19, pp.2905 - 2912
Indexed
SCIE
SCOPUS
Journal Title
ADVANCED FUNCTIONAL MATERIALS
Volume
18
Number
19
Start Page
2905
End Page
2912
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/122568
DOI
10.1002/adfm.200800358
ISSN
1616-301X
Abstract
The highly photosensitive characteristics of organic thin-film transistors (OTFTs) made using soluble star-shaped oligothiophenes with four-armed pi-conjugation paths, 4(HPBT)-benzene and 4(HP3T)-benzene molecules having a relatively high quantum yield, are reported. 4(HPBT)-benzene-based organic phototransistors (OPTs) exhibited high photosensitivity (similar to 2500-4300 A W(-1)) even with low optical powers (similar to 6.8-30 mu W cm(-2)) at zero gate bias. The measured photosensitivity of the devices was much higher than that of inorganic single-crystal Si-based phototransistors, as well as that of other OPTs reported earlier. With the highly photosensitive characteristics of the 4(HPBT)-benzene-based OPTs, a high ratio of the on and off current switching of similar to 4 x 10(4) With low optical power and low gate bias was observed. The slow relaxation of the photoinduced charges and charge-trapping phenomena at the interface could lead to a reproducible memory operation for 4(HPBT)-benzene-based OPTs.
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