Insertion of Two-Dimensional Photonic Crystal Pattern on p-GaN Layer of GaN-Based Light-Emitting Diodes Using Bi-Layer Nanoimprint Lithography
DC Field | Value | Language |
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dc.contributor.author | Byeon, Kyeong-Jae | - |
dc.contributor.author | Hwang, Seon-Yong | - |
dc.contributor.author | Hong, Chang-Hee | - |
dc.contributor.author | Baek, Jong Hyeob | - |
dc.contributor.author | Lee, Heon | - |
dc.date.accessioned | 2021-09-09T03:49:29Z | - |
dc.date.available | 2021-09-09T03:49:29Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-10 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/122593 | - |
dc.description.abstract | Nanoimprint lithography (NIL) was adapted to fabricate two-dimensional (2-D) photonic crystal (PC) pattern on the p-GaN layer of InGaN/GaN multi quantum well light-emitting diodes (LEDs) structure to improve the light extraction efficiency. For the uniform transfer of the PC pattern, a bi-layer imprinting method with liquid phase resin was used. The p-GaN layer was patterned with a periodic array of holes by an inductively coupled plasma etching process, based on SiCl4/Ar plasmas. As a result, 2-D photonic crystal patterns with 144 nm, 200 nm and 347 nm diameter holes were uniformly formed on the p-GaN layer and the photoluminescence (PL) intensity of each patterned LED samples was increased by more than 2.6 times, as compared to that of the un-patterned LED sample. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | NANO-IMPRINTING LITHOGRAPHY | - |
dc.subject | EXTRACTION EFFICIENCY | - |
dc.subject | OUTPUT POWER | - |
dc.subject | BLUE | - |
dc.subject | WAFER | - |
dc.title | Insertion of Two-Dimensional Photonic Crystal Pattern on p-GaN Layer of GaN-Based Light-Emitting Diodes Using Bi-Layer Nanoimprint Lithography | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Heon | - |
dc.identifier.doi | 10.1166/jnn.2008.1391 | - |
dc.identifier.wosid | 000261390500070 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.8, no.10, pp.5242 - 5246 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 8 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 5242 | - |
dc.citation.endPage | 5246 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | NANO-IMPRINTING LITHOGRAPHY | - |
dc.subject.keywordPlus | EXTRACTION EFFICIENCY | - |
dc.subject.keywordPlus | OUTPUT POWER | - |
dc.subject.keywordPlus | BLUE | - |
dc.subject.keywordPlus | WAFER | - |
dc.subject.keywordAuthor | Light-Emitting Diodes | - |
dc.subject.keywordAuthor | Photon Extraction Efficiency | - |
dc.subject.keywordAuthor | Two Dimensional Photonic Crystals | - |
dc.subject.keywordAuthor | Nanoimprint Lithography | - |
dc.subject.keywordAuthor | Photoluminescence | - |
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