Insertion of Two-Dimensional Photonic Crystal Pattern on p-GaN Layer of GaN-Based Light-Emitting Diodes Using Bi-Layer Nanoimprint Lithography
- Authors
- Byeon, Kyeong-Jae; Hwang, Seon-Yong; Hong, Chang-Hee; Baek, Jong Hyeob; Lee, Heon
- Issue Date
- 10월-2008
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Light-Emitting Diodes; Photon Extraction Efficiency; Two Dimensional Photonic Crystals; Nanoimprint Lithography; Photoluminescence
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.8, no.10, pp.5242 - 5246
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 8
- Number
- 10
- Start Page
- 5242
- End Page
- 5246
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/122593
- DOI
- 10.1166/jnn.2008.1391
- ISSN
- 1533-4880
- Abstract
- Nanoimprint lithography (NIL) was adapted to fabricate two-dimensional (2-D) photonic crystal (PC) pattern on the p-GaN layer of InGaN/GaN multi quantum well light-emitting diodes (LEDs) structure to improve the light extraction efficiency. For the uniform transfer of the PC pattern, a bi-layer imprinting method with liquid phase resin was used. The p-GaN layer was patterned with a periodic array of holes by an inductively coupled plasma etching process, based on SiCl4/Ar plasmas. As a result, 2-D photonic crystal patterns with 144 nm, 200 nm and 347 nm diameter holes were uniformly formed on the p-GaN layer and the photoluminescence (PL) intensity of each patterned LED samples was increased by more than 2.6 times, as compared to that of the un-patterned LED sample.
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