Photoluminescence of ZnO nanowires dependent on O-2 and Ar annealing
DC Field | Value | Language |
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dc.contributor.author | Ha, Byeongchul | - |
dc.contributor.author | Ham, Heon | - |
dc.contributor.author | Lee, Cheol Jin | - |
dc.date.accessioned | 2021-09-09T03:57:22Z | - |
dc.date.available | 2021-09-09T03:57:22Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-10 | - |
dc.identifier.issn | 0022-3697 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/122635 | - |
dc.description.abstract | High-purity ZnO nanowires have been synthesized on Si substrates without the presence of a catalyst at 600 degrees C by a simple thermal vapor technique. Photoluminescence (PL) spectra of the annealed samples at 900 degrees C under oxygen and argon gases have been investigated. After 02 or At annealing, the PL visible-emission intensity that is related to intrinsic defects (oxygen vacancies) is greatly reduced compared with as-grown ZnO nanowires because the oxygen-gas ions or oxygen interstitials diffuse into the oxygen vacancies during annealing process. The blue-band peak of the O-2- or Ar-annealed ZnO naonowires is also smaller than the green-band peak in the visible broadband because of the reduction of oxygen vacancies. Therefore, the main intrinsic defects (oxygen vacancies) of as-grown ZnO nanowires can be reduced by O-2 or Ar annealing, which is an important procedure for the development of advanced optoelectronic ZnO nanowire devices. (C) 2008 Elsevier Ltd. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.subject | ZINC-OXIDE | - |
dc.subject | LUMINESCENCE | - |
dc.subject | GROWTH | - |
dc.subject | NANORODS | - |
dc.title | Photoluminescence of ZnO nanowires dependent on O-2 and Ar annealing | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Cheol Jin | - |
dc.identifier.doi | 10.1016/j.jpcs.2008.04.041 | - |
dc.identifier.scopusid | 2-s2.0-51049099585 | - |
dc.identifier.wosid | 000260236100018 | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, v.69, no.10, pp.2453 - 2456 | - |
dc.relation.isPartOf | JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | - |
dc.citation.title | JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | - |
dc.citation.volume | 69 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 2453 | - |
dc.citation.endPage | 2456 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | ZINC-OXIDE | - |
dc.subject.keywordPlus | LUMINESCENCE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | NANORODS | - |
dc.subject.keywordAuthor | Nanostructures | - |
dc.subject.keywordAuthor | Optical materials | - |
dc.subject.keywordAuthor | Defects | - |
dc.subject.keywordAuthor | Luminescence | - |
dc.subject.keywordAuthor | Optical properties | - |
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