Photoluminescence of ZnO nanowires dependent on O-2 and Ar annealing
- Authors
- Ha, Byeongchul; Ham, Heon; Lee, Cheol Jin
- Issue Date
- 10월-2008
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Nanostructures; Optical materials; Defects; Luminescence; Optical properties
- Citation
- JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, v.69, no.10, pp.2453 - 2456
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
- Volume
- 69
- Number
- 10
- Start Page
- 2453
- End Page
- 2456
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/122635
- DOI
- 10.1016/j.jpcs.2008.04.041
- ISSN
- 0022-3697
- Abstract
- High-purity ZnO nanowires have been synthesized on Si substrates without the presence of a catalyst at 600 degrees C by a simple thermal vapor technique. Photoluminescence (PL) spectra of the annealed samples at 900 degrees C under oxygen and argon gases have been investigated. After 02 or At annealing, the PL visible-emission intensity that is related to intrinsic defects (oxygen vacancies) is greatly reduced compared with as-grown ZnO nanowires because the oxygen-gas ions or oxygen interstitials diffuse into the oxygen vacancies during annealing process. The blue-band peak of the O-2- or Ar-annealed ZnO naonowires is also smaller than the green-band peak in the visible broadband because of the reduction of oxygen vacancies. Therefore, the main intrinsic defects (oxygen vacancies) of as-grown ZnO nanowires can be reduced by O-2 or Ar annealing, which is an important procedure for the development of advanced optoelectronic ZnO nanowire devices. (C) 2008 Elsevier Ltd. All rights reserved.
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