Electrical characteristics of HgTe nanocrystal-based thin film transistors fabricated on flexible plastic substrates
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Dong-Won | - |
dc.contributor.author | Jang, Jaewon | - |
dc.contributor.author | Kim, Hyunsuk | - |
dc.contributor.author | Cho, Kyoungah | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2021-09-09T04:30:28Z | - |
dc.date.available | 2021-09-09T04:30:28Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-09-01 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/122731 | - |
dc.description.abstract | HgTe nanocrystal-based thin film transistors were fabricated on flexible polyethersulfone substrates and their electrical properties were characterized. Hydrophilic Al2O3 buffer layers were first deposited on the flexible substrates and HgTe nanocrystal films were then formed on top of the buffer layers. A representative top-gate flexible thin film transistor with a channel composed of a HgTe nanocrystal film functioned as a p-channel transistor and exhibited a mobility of similar to 1.20 cm(2)/V.s and an on/off current ratio of similar to 1 x 10(3). (c) 2008 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | ELECTRODES | - |
dc.subject | SILICON | - |
dc.title | Electrical characteristics of HgTe nanocrystal-based thin film transistors fabricated on flexible plastic substrates | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1016/j.tsf.2008.04.044 | - |
dc.identifier.scopusid | 2-s2.0-49349092278 | - |
dc.identifier.wosid | 000259727900072 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.516, no.21, pp.7715 - 7719 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 516 | - |
dc.citation.number | 21 | - |
dc.citation.startPage | 7715 | - |
dc.citation.endPage | 7719 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | ELECTRODES | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordAuthor | mercury telluride | - |
dc.subject.keywordAuthor | nanocrystals | - |
dc.subject.keywordAuthor | thin film transistor | - |
dc.subject.keywordAuthor | hydrophilicity | - |
dc.subject.keywordAuthor | polymer substrate | - |
dc.subject.keywordAuthor | aluminum oxide | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.