Cu-doped ZnO-based p-n hetero-junction light emitting diode
- Authors
- Kim, J. B.; Byun, D.; Ie, S. Y.; Park, D. H.; Choi, W. K.; Choi, Ji-Won; Angadi, Basavaraj
- Issue Date
- 9월-2008
- Publisher
- IOP PUBLISHING LTD
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.23, no.9
- Indexed
- SCIE
SCOPUS
- Journal Title
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Volume
- 23
- Number
- 9
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/122762
- DOI
- 10.1088/0268-1242/23/9/095004
- ISSN
- 0268-1242
- Abstract
- Copper-doped p-ZnO thin films (Cu:ZnO) were grown on alpha-Al2O3(0001) and 6H: SiC(0001) single crystal substrates by plasma-assisted molecular beam epitaxy. A p-n hetero-junction with p-Cu:ZnO/n-6H:SiC was successfully fabricated and demonstrated as a greenish-blue light emitting diode ( LED). The rectifying I-V curve along with the matching photoluminescence and electroluminescence emissions characterizes the fabricated p-n hetero-junction LED. The Cu cell temperature (TCu) and the post-deposition annealing environment greatly influence the Cu oxidation state, and hence the electrical conversion from n-type to p-type and carrier concentration in the films. The higher TCu and post-annealing in O-plasma were observed to be the favorable conditions for Cu2+ and hence the p-type nature of the films.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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