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Dynamics of magnetization switching of exchange-coupled trilayers by using a micromagnetic simulation

Authors
Kim, K. S.Lee, H. J.Lim, S. H.
Issue Date
9월-2008
Publisher
KOREAN PHYSICAL SOC
Keywords
dynamics of magnetization switching; exchange-coupled trilayers; magnetic random access memory; micromagnetic simulation
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.3, pp.1492 - 1497
Indexed
SCIE
SCOPUS
KCI
Journal Title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume
53
Number
3
Start Page
1492
End Page
1497
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/122769
DOI
10.3938/jkps.53.1492
ISSN
0374-4884
Abstract
A micromagnetic simulation of the dynamics of magnetization switching is performed in exchange-coupled trilayers consisting of two ferromagnetic layers separated by a very thin non-magnetic spacer. The elliptical magnetic thin films with lateral dimensions of 200 run (long axis) x 100 nm (short axis) and with a total magnetic layer thickness of 4 nm are considered. The spin-flop field and the saturation field obtained under static conditions are found to vary significantly with the thickness asymmetry, but a much smaller dependence is observed in the direct write field. The dynamics of magnetization switching is characterized by an abrupt, coherent rotation, followed by oscillations that eventually die out at a pulse duration time of 10 similar to 20 ns, depending oil the magnetization component and the final magnetic state. The coherent rotation occurs at a short pulse duration time of 1 similar to 2 ns. The oscillations in the two magnetic layers are completely in phase and the frequency estimated from a Fourier analysis is 1.0 GHz. A large difference in the dynamic switching behavior is also observed to exist, depending on the final magnetic state.
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LIM, Sang Ho
공과대학 (신소재공학부)
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