The Modification of the Electrical Property in Double-Walled Carbon Nanotube Devices with a Self-Assembled Monolayer of Molecules
- Authors
- Jeon, Eun-Kyoung; Kim, Hyo-Suk; Kim, Byoung-Kye; Kim, Ju-Jin; Lee, Jeong-O; Lee, Cheol Jin
- Issue Date
- 9월-2008
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Carbon Nanotube; Field Effect Transistor; Self-Assembled Monolayer; Schottky Barrier
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.8, no.9, pp.4349 - 4352
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 8
- Number
- 9
- Start Page
- 4349
- End Page
- 4352
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/122775
- DOI
- 10.1166/jnn.2008.277
- ISSN
- 1533-4880
- Abstract
- We have investigated the electrical transports of double-walled carbon nanotube field effect transistors (DWNT-FETs) with modified contacts. The CNT/Au metal contacts of DWNT-FETs were modified with a self-assembled monolayer of 2-aminoethanethiol molecules. In ambient air, the contact-modified DWNT-FETs showed a decreased conductance in the p-channel (negative gate voltages) and an increased conductance in the n-channel (positive gate voltages), while the original device showed p-type transport. In a vacuum, the n-channel current in the contact-modified DWNT-FET started to rise. We observed a clear n-type transport in the high vacuum. Almost no changes in the gate threshold voltages were observed by means of the contact-modification with a self-assembled monolayer. While the semiconducting DWNT-FET showed a clear transition from a p-type to n-type transistor with contact modification, no apparent changes were observed in semi-metallic DWNT devices.
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