Electrical Characterization of ZnO Single Nanowire Device for Chemical Sensor Application
- Authors
- Kim, E. K.; Lee, H. -Y.; Moon, S. E.; Park, J.; Park, S. -J.; Kwak, J. -H.; Maeng, S.; Park, K. -H.; Kim, J.; Kim, S. W.; Ji, H. J.; Kim, G. T.
- Issue Date
- 9월-2008
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- ZnO; Nanowire Device; Contact Resistance; Activation Energy; Chemical Sensor
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.8, no.9, pp.4698 - 4701
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 8
- Number
- 9
- Start Page
- 4698
- End Page
- 4701
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/122782
- DOI
- 10.1166/jnn.2008.IC65
- ISSN
- 1533-4880
- Abstract
- Vertically well-aligned high quality ZnO nanowires were grown on GaN epilayer on c-plane sapphire via a vapor-liquid-solid (VLS) process by introducing an Au thin film (3 nm) as a catalyst. ZnO single nanowire device was ingenuously fabricated by combining conventional optical lithography and high resolution electron beam lithography and its current-voltage characteristics were measured with doing the post process to acquire reproducible performance as a chemical gas sensor. And its temperature dependent current-voltage characteristics were measured to investigate temperature dependant electrical transport. The ZnO nanowire device showed slightly non-ohmic current-voltage characteristics which may be due to back-to-back configuration of the diodes with the insulating contact barriers and showed an relatively small activation energy of 0.2 eV. To test our device as a chemical sensor, the NO2 gas response was reported at the elevated temperature.
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