Solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a polymer dielectric on a flexible substrate
DC Field | Value | Language |
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dc.contributor.author | Shin, Sang-Il | - |
dc.contributor.author | Kwon, Jae-Hong | - |
dc.contributor.author | Kang, Hochul | - |
dc.contributor.author | Ju, Byeong-Kwon | - |
dc.date.accessioned | 2021-09-09T05:39:30Z | - |
dc.date.available | 2021-09-09T05:39:30Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-08 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/122943 | - |
dc.description.abstract | The authors report the fabrication of solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a cross-linked poly-4-vinylphenol (PVP) dielectric on a polyethersulphone (PES) substrate. The device exhibited useful electrical characteristics, including a saturation field effect mobility of 2.08 x 10(-2) cm(2) V-1 s(-1), a current on/off ratio of 105, a threshold voltage of -2 V and an excellent subthreshold slope of 0.86 V/dec. It was demonstrated that the significant improvement in the subthreshold slope of TIPS-pentacene TFTs could be attributed to a decreased carrier trap density at the PVP/TIPS-pentacene film interface. Furthermore, a 1,2,3,4-tetrahydronaphthalene (Tetralin) solvent used in this study had a high boiling point, which had a positive effect on the morphology and the molecular ordering of the TIPS-pentacene film. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | PERFORMANCE | - |
dc.subject | MORPHOLOGY | - |
dc.subject | PRECURSOR | - |
dc.subject | MOBILITY | - |
dc.subject | SURFACE | - |
dc.title | Solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a polymer dielectric on a flexible substrate | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ju, Byeong-Kwon | - |
dc.identifier.doi | 10.1088/0268-1242/23/8/085009 | - |
dc.identifier.scopusid | 2-s2.0-51849119620 | - |
dc.identifier.wosid | 000257938100009 | - |
dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.23, no.8 | - |
dc.relation.isPartOf | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 23 | - |
dc.citation.number | 8 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | MORPHOLOGY | - |
dc.subject.keywordPlus | PRECURSOR | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordAuthor | Organic TFT | - |
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