Solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a polymer dielectric on a flexible substrate
- Authors
- Shin, Sang-Il; Kwon, Jae-Hong; Kang, Hochul; Ju, Byeong-Kwon
- Issue Date
- 8월-2008
- Publisher
- IOP PUBLISHING LTD
- Keywords
- Organic TFT
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.23, no.8
- Indexed
- SCIE
SCOPUS
- Journal Title
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Volume
- 23
- Number
- 8
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/122943
- DOI
- 10.1088/0268-1242/23/8/085009
- ISSN
- 0268-1242
- Abstract
- The authors report the fabrication of solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a cross-linked poly-4-vinylphenol (PVP) dielectric on a polyethersulphone (PES) substrate. The device exhibited useful electrical characteristics, including a saturation field effect mobility of 2.08 x 10(-2) cm(2) V-1 s(-1), a current on/off ratio of 105, a threshold voltage of -2 V and an excellent subthreshold slope of 0.86 V/dec. It was demonstrated that the significant improvement in the subthreshold slope of TIPS-pentacene TFTs could be attributed to a decreased carrier trap density at the PVP/TIPS-pentacene film interface. Furthermore, a 1,2,3,4-tetrahydronaphthalene (Tetralin) solvent used in this study had a high boiling point, which had a positive effect on the morphology and the molecular ordering of the TIPS-pentacene film.
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