Effective formation of interface controlled Y2O3 thin film on Si(100) in a metal-(ferroelectric)-insulator-semiconductor structure
DC Field | Value | Language |
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dc.contributor.author | Kwon, Kwang-Ho | - |
dc.contributor.author | Lee, Chang Ki | - |
dc.contributor.author | Yang, Jun-Kyu | - |
dc.contributor.author | Choi, Sun Gyu | - |
dc.contributor.author | Chang, Ho Jung | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.contributor.author | Park, Hyung-Ho | - |
dc.date.accessioned | 2021-09-09T05:48:55Z | - |
dc.date.available | 2021-09-09T05:48:55Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-08 | - |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/122983 | - |
dc.description.abstract | Yttrium was deposited on the chemical oxide of Si and annealed under vacuum to control the interface for the formation Of Y2O3 as an insulating barrier to construct a metal-ferroelectric-insulator-semiconductor structure. Two different pre-annealing temperatures of 600 and 700 degrees C were chosen to investigate the effect of the interface state formed after the pre-annealing step on the successive formation of Y2O3 insulator and Nd2Ti2O7 (NTC) ferroelectric layer through annealing under an oxygen atmosphere at 800 degrees C. Pre-anneal treatments of Y-metal/chemical-SiO2/Si at 600 and 700 degrees C induced a formation of Y2O3 and Y-silicate, respectively. The difference in the pre-anneal temperature induced almost no change in the electrical properties of the Y2O3/interface/Si system, but degraded properties were observed in the NTO/Y2O3/interface/Si system pre-annealed at 600 degrees C when compared with the sample pre-annealed at 700 degrees C. C-V characteristics of the NTO/Y2O3/Si structured system showed a clockwise direction of hysteresis, and this gap could be used as a memory window for a ferroelectric-gate. A smaller hysteric gap and electrical breakdown values were observed in the NTO/Y2O3/Si system pre-annealed at 600 degrees C, and this was due to an unintentional distribution of the applied field from the presence of an interfacial layer containing Y-silicate and SiO2 phases. (C) 2008 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | ELECTRICAL-PROPERTIES | - |
dc.subject | METAL | - |
dc.subject | SILICON | - |
dc.subject | SI | - |
dc.title | Effective formation of interface controlled Y2O3 thin film on Si(100) in a metal-(ferroelectric)-insulator-semiconductor structure | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kwon, Kwang-Ho | - |
dc.identifier.doi | 10.1016/j.mee.2008.05.004 | - |
dc.identifier.scopusid | 2-s2.0-48949116045 | - |
dc.identifier.wosid | 000258714000020 | - |
dc.identifier.bibliographicCitation | MICROELECTRONIC ENGINEERING, v.85, no.8, pp.1781 - 1785 | - |
dc.relation.isPartOf | MICROELECTRONIC ENGINEERING | - |
dc.citation.title | MICROELECTRONIC ENGINEERING | - |
dc.citation.volume | 85 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 1781 | - |
dc.citation.endPage | 1785 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | METAL | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordAuthor | interface control | - |
dc.subject.keywordAuthor | yttrium silicate | - |
dc.subject.keywordAuthor | chemical oxide | - |
dc.subject.keywordAuthor | Y2O3 | - |
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