Metallization contacts to nonpolar a-plane n-type GaN
- Authors
- Kim, Hyunsoo; Lee, Sung-Nam; Park, Yongjo; Kwak, Joon Seop; Seong, Tae-Yeon
- Issue Date
- 21-7월-2008
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.93, no.3
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 93
- Number
- 3
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/123017
- DOI
- 10.1063/1.2963492
- ISSN
- 0003-6951
- Abstract
- We have investigated the electrical characteristics of metallization contacts to nonpolar a-plane and polar c-plane n-type GaN. Pd Schottky diodes and x-ray photoemission spectroscopy measurements show that the Schottky barrier height of the a-plane GaN is lower than that of the c-plane GaN by 0.24 and 0.30 eV, respectively. Ti/Al Ohmic contacts to the a-plane n-GaN produce lower contact resistivity than that of the c-plane samples when annealed at 500 degrees C. However, Ti/Al contacts to the c-plane and a-plane GaN show opposite electrical behavior when annealed at temperatures above 500 degrees C, which is attributed to the absence of polarization-induced surface charges for a-plane GaN.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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