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Noise characteristics of single-walled carbon nanotube network transistors

Authors
Kim, Un JeongKim, Kang HyunKim, KyuTaeMin, Yo-SepPark, Wanjun
Issue Date
16-7월-2008
Publisher
IOP PUBLISHING LTD
Citation
NANOTECHNOLOGY, v.19, no.28
Indexed
SCIE
SCOPUS
Journal Title
NANOTECHNOLOGY
Volume
19
Number
28
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/123020
DOI
10.1088/0957-4484/19/28/285705
ISSN
0957-4484
Abstract
The noise characteristics of randomly networked single-walled carbon nanotubes grown directly by plasma enhanced chemical vapor deposition (PECVD) are studied with field effect transistors (FETs). Due to the geometrical complexity of nanotube networks in the channel area and the large number of tube -tube/tube-metal junctions, the inverse frequency, 1/f, dependence of the noise shows a similar level to that of a single single-walled carbon nanotube transistor. Detailed analysis is performed with the parameters of number of mobile carriers and mobility in the different environment. This shows that the change in the number of mobile carriers resulting in the mobility change due to adsorption and desorption of gas molecules (mostly oxygen molecules) to the tube surface is a key factor in the 1/f noise level for carbon nanotube network transistors.
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Kim, Gyu Tae
공과대학 (전기전자공학부)
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