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Resistive switching characteristics of Pr0.7Ca0.3MnO3 thin films grown on glass substrates by pulsed laser deposition

Authors
Kim, D. S.Kim, Y. H.Lee, C. E.Kim, Y. T.
Issue Date
5-Dec-2006
Publisher
ELSEVIER SCIENCE SA
Keywords
Pr0.7Ca0.3MnO3 thin film; glass substrate; pulsed laser deposition; resistive switching
Citation
THIN SOLID FILMS, v.515, no.4, pp.2573 - 2576
Indexed
SCIE
SCOPUS
Journal Title
THIN SOLID FILMS
Volume
515
Number
4
Start Page
2573
End Page
2576
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/123107
DOI
10.1016/j.tsf.2006.08.011
ISSN
0040-6090
Abstract
Pr0.7Ca0.3MnO3 (PCMO) thin films were prepared on glass substrates by pulsed laser deposition and their resistive switching characteristics were investigated on a structure comprised of Ag/PCMO/Ag/glass. The PCMO films were grown with a (112) preferred orientation on Ag/glass substrates due to crystalline Ag layer. The crystalline PCMO films exhibited resistive switching characteristics by polarity change of bias voltage. The resistance ratio of high resistance state and low resistance state was enhanced by improvement of crystallinity of the PCMO film. The maximum resistance ratio obtained in this work was similar to 4.2. Finally, the resistive switching of the PCMO films observed in this work is expected to make it possible to integrate the non-volatile memory devices on glass substrates. (c) 2006 Elsevier B.V. All rights reserved.
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