Passivation of semi-insulating polycrystalline CdZnTe films
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Ki Hyun | - |
dc.contributor.author | Won, Jae Ho | - |
dc.contributor.author | Cho, Shin Hang | - |
dc.contributor.author | Suh, Jong Hee | - |
dc.contributor.author | Cho, Pyong Kon | - |
dc.contributor.author | Hong, Jinki | - |
dc.contributor.author | Kim, Sun Ung | - |
dc.contributor.author | Han, You Ree | - |
dc.date.accessioned | 2021-09-09T07:04:24Z | - |
dc.date.available | 2021-09-09T07:04:24Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-07 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/123305 | - |
dc.description.abstract | Surface effects play an important role in the overall performance of X-ray detector. The effects of passivation with (NH4)(2)S on semi-insulating polycrystalline CdZnTe thick films were analyzed with X-ray photoelectron spectroscopy (XPS), photoconductive decay (PCD), noise power spectrum and pulse height spectra measurements. Sulfur passivation with (HN4)(2)S effectively removes the Te-oxide layers on the CdZnTe surface, reduces the surface leakage current and gives higher energy resolution by suppressing 1/f noise. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | SULFUR TREATMENT | - |
dc.subject | RAY | - |
dc.subject | DETECTOR | - |
dc.subject | QUALITY | - |
dc.subject | SYSTEM | - |
dc.title | Passivation of semi-insulating polycrystalline CdZnTe films | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, Jinki | - |
dc.contributor.affiliatedAuthor | Kim, Sun Ung | - |
dc.identifier.wosid | 000257664700068 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.1, pp.317 - 321 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 53 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 317 | - |
dc.citation.endPage | 321 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.identifier.kciid | ART001464086 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | SULFUR TREATMENT | - |
dc.subject.keywordPlus | RAY | - |
dc.subject.keywordPlus | DETECTOR | - |
dc.subject.keywordPlus | QUALITY | - |
dc.subject.keywordPlus | SYSTEM | - |
dc.subject.keywordAuthor | sulfur passivation | - |
dc.subject.keywordAuthor | leakage current | - |
dc.subject.keywordAuthor | CdTeS | - |
dc.subject.keywordAuthor | heterojunction | - |
dc.subject.keywordAuthor | semi-insulating CdZnTe | - |
dc.subject.keywordAuthor | inter-pixel resistance | - |
dc.subject.keywordAuthor | 1/f noise | - |
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