Electrical properties of amorphous Bi(5)Nb(3)O(15) thin film for RF MIM capacitors

Abstract

Amorphous Bi(5)Nb(3)O(15)(B(5)N(3)) film grown at 300 degrees C showed a high-k value of 71 at 100 kHz, and similar k value was observed at 0.5-5.0 GHz. The 80-nm-thick film exhibited a high capacitance density of 7.8 fF/mu m(2) and a low dissipation factor, of 0.95% at 100 kHz with a low leakage-current density of 1.23 nA/cm(2) at 1 V. The quadratic and linear voltage coefficient of capacitances of the B(5)N(3) film were 438 ppm/V(2) and 456 ppm/V, respectively, with a low temperature coefficient of capacitance of 309 ppm/degrees C at 100 kHz. These results confirmed the potential of the amorphous B(5)N(3) film as a good candidate material for a high-performance metal-insulator-metal capacitors.