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Electrical properties of amorphous Bi(5)Nb(3)O(15) thin film for RF MIM capacitors
- Authors
- Cho, Kyung-Hoon; Choi, Chang-Hak; Hong, Kyoung Pyo; Choi, Joo-Young; Jeong, Young Hun; Nahm, Sahn; Kang, Chong-Yun; Yoon, Seok-Jin; Lee, Hwack-Joo
- Issue Date
- 7월-2008
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Bi(5)Nb(3)O(15); high-k; metal-insulator-metal (MIM) capacitor; temperature coefficient of capacitance (TCC); voltage coefficient of capacitance (VCC)
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.29, no.7, pp.684 - 687
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 29
- Number
- 7
- Start Page
- 684
- End Page
- 687
- ISSN
- 0741-3106
- Abstract
- Amorphous Bi(5)Nb(3)O(15)(B(5)N(3)) film grown at 300 degrees C showed a high-k value of 71 at 100 kHz, and similar k value was observed at 0.5-5.0 GHz. The 80-nm-thick film exhibited a high capacitance density of 7.8 fF/mu m(2) and a low dissipation factor, of 0.95% at 100 kHz with a low leakage-current density of 1.23 nA/cm(2) at 1 V. The quadratic and linear voltage coefficient of capacitances of the B(5)N(3) film were 438 ppm/V(2) and 456 ppm/V, respectively, with a low temperature coefficient of capacitance of 309 ppm/degrees C at 100 kHz. These results confirmed the potential of the amorphous B(5)N(3) film as a good candidate material for a high-performance metal-insulator-metal capacitors.
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