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Etching characteristics of Al2O3 thin films in inductively coupled BCl3/Ar plasma
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yun, Sun Jin | - |
| dc.contributor.author | Efremov, Alexander | - |
| dc.contributor.author | Kim, Mansu | - |
| dc.contributor.author | Kim, Dae-Won | - |
| dc.contributor.author | Lim, Jung Wook | - |
| dc.contributor.author | Kim, Yong-Hae | - |
| dc.contributor.author | Chung, Choong-Heui | - |
| dc.contributor.author | Park, Dong Jin | - |
| dc.contributor.author | Kwon, Kwang-Ho | - |
| dc.date.accessioned | 2021-09-09T07:34:21Z | - |
| dc.date.available | 2021-09-09T07:34:21Z | - |
| dc.date.issued | 2008-06-19 | - |
| dc.identifier.issn | 0042-207X | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/123376 | - |
| dc.description.abstract | The investigation of Al2O3 etch characteristics in the BCl3/Ar inductively coupled plasma was carried out in terms of effects of input process parameters (gas pressure, input power, bias power) on etch rate and etch selectivity over poly-Si and photoresist. it was found that, with the changes in gas pressure and input power, the Al2O3 etch rate follows the behavior of ion current density while the process rate is noticeably contributed by the chemical etch pathway. The influence of input power on the etch threshold may be connected with the concurrence of chemical and physical etch pathways in ion-assisted chemical reaction. (C) 2008 Elsevier Ltd. All rights reserved. | - |
| dc.format.extent | 5 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
| dc.title | Etching characteristics of Al2O3 thin films in inductively coupled BCl3/Ar plasma | - |
| dc.type | Article | - |
| dc.publisher.location | 영국 | - |
| dc.identifier.doi | 10.1016/j.vacuum.2007.12.018 | - |
| dc.identifier.scopusid | 2-s2.0-46549090118 | - |
| dc.identifier.wosid | 000257632400011 | - |
| dc.identifier.bibliographicCitation | VACUUM, v.82, no.11, pp 1198 - 1202 | - |
| dc.citation.title | VACUUM | - |
| dc.citation.volume | 82 | - |
| dc.citation.number | 11 | - |
| dc.citation.startPage | 1198 | - |
| dc.citation.endPage | 1202 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
| dc.subject.keywordPlus | CHLORINE | - |
| dc.subject.keywordPlus | POLYSILICON | - |
| dc.subject.keywordPlus | CL-2 | - |
| dc.subject.keywordAuthor | Al2O3 | - |
| dc.subject.keywordAuthor | etch rate | - |
| dc.subject.keywordAuthor | etch threshold | - |
| dc.subject.keywordAuthor | sputtering | - |
| dc.subject.keywordAuthor | selectivity | - |
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Related Researcher
- Kwon, Kwang Ho
- Department of Control and Instrumentation Engineering