Surface leakage current control with heterojunction-type passivation in semi-insulating CdZnTe material
DC Field | Value | Language |
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dc.contributor.author | Cho, Shin Hang | - |
dc.contributor.author | Suh, Jong Hee | - |
dc.contributor.author | Won, Jae Ho | - |
dc.contributor.author | Kim, Ki Hyun | - |
dc.contributor.author | Hong, Jin Ki | - |
dc.contributor.author | Kim, Sun Ung | - |
dc.date.accessioned | 2021-09-09T07:36:55Z | - |
dc.date.available | 2021-09-09T07:36:55Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-06-11 | - |
dc.identifier.issn | 0168-9002 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/123384 | - |
dc.description.abstract | Inter-pixel resistance in the planar structure X-ray or gamma-ray detector has severe effects on signal cross-talk and the signal integration time. Generally, Br-MeOH etching in Cd-based compounds leaves a Te-rich or Cd-rich surface resulting from selective etching. The etching then converts the Te-rich or Cd-rich surface in air into TeO2 or CdO oxides, which exhibit low resistance. To reduce the surface recombination, we adopted (NH4)(2)S for surface passivation in the polycrystalline CdZnTe:Cl grown by thermal evaporation method. The optimization of passivation was confirmed by I-V measurement and X-ray photoemission spectroscopy (XPS) analysis. From the I-V curve, we confirmed that the surface resistance was considerably increased after passivation with (NH4)(2)S. XPS data showed that (NH4)2S passivation removed conductive TeO2 layers and induced formation of insulating CdTeO3 and CdS layers. A heterojunction by the thin CdS layer and CdZnTe was formed. (c) 2008 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | CADMIUM ZINC TELLURIDE | - |
dc.title | Surface leakage current control with heterojunction-type passivation in semi-insulating CdZnTe material | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, Jin Ki | - |
dc.contributor.affiliatedAuthor | Kim, Sun Ung | - |
dc.identifier.doi | 10.1016/j.nima.2008.03.059 | - |
dc.identifier.scopusid | 2-s2.0-44649113631 | - |
dc.identifier.wosid | 000257529300050 | - |
dc.identifier.bibliographicCitation | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, v.591, no.1, pp.203 - 205 | - |
dc.relation.isPartOf | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | - |
dc.citation.title | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | - |
dc.citation.volume | 591 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 203 | - |
dc.citation.endPage | 205 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Instruments & Instrumentation | - |
dc.relation.journalResearchArea | Nuclear Science & Technology | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Instruments & Instrumentation | - |
dc.relation.journalWebOfScienceCategory | Nuclear Science & Technology | - |
dc.relation.journalWebOfScienceCategory | Physics, Nuclear | - |
dc.relation.journalWebOfScienceCategory | Physics, Particles & Fields | - |
dc.subject.keywordPlus | CADMIUM ZINC TELLURIDE | - |
dc.subject.keywordAuthor | CdZnTe | - |
dc.subject.keywordAuthor | passivation | - |
dc.subject.keywordAuthor | CdS | - |
dc.subject.keywordAuthor | surface | - |
dc.subject.keywordAuthor | XPS | - |
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