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High-efficiency GaN-based light-emitting diodes fabricated with metallic hybrid reflectors

Authors
Kim, HyunsooLee, Sung-NamPark, YongjoSeong, Tae-Yeon
Issue Date
Jun-2008
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
electrode; GaN; light-emitting diode (LED)
Citation
IEEE ELECTRON DEVICE LETTERS, v.29, no.6, pp 582 - 584
Pages
3
Indexed
SCIE
SCOPUS
Journal Title
IEEE ELECTRON DEVICE LETTERS
Volume
29
Number
6
Start Page
582
End Page
584
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/123502
DOI
10.1109/LED.2008.921392
ISSN
0741-3106
1558-0563
Abstract
We report on high-efficiency GaN-based light-emitting diodes (LEDs) fabricated with metallic hybrid reflectors (MHRs). It is shown that the MHRs consisting of an injection part (with low p-contact resistance and intermediate reflectance) and a spreading part (with high p-contact resistance and good reflectance) can enhance current injection and overall light reflectivity. Compared with reference LEDs with single reflectors, LEDs fabricated with Ag-based MHRs give higher output power by 8.9% and a reduction in forward voltage by 0.02 V (at 20 ntA), resulting in the improvement of the power efficiency by similar to 10%.
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