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High-efficiency GaN-based light-emitting diodes fabricated with metallic hybrid reflectors
- Authors
- Kim, Hyunsoo; Lee, Sung-Nam; Park, Yongjo; Seong, Tae-Yeon
- Issue Date
- 6월-2008
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- electrode; GaN; light-emitting diode (LED)
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.29, no.6, pp.582 - 584
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 29
- Number
- 6
- Start Page
- 582
- End Page
- 584
- ISSN
- 0741-3106
- Abstract
- We report on high-efficiency GaN-based light-emitting diodes (LEDs) fabricated with metallic hybrid reflectors (MHRs). It is shown that the MHRs consisting of an injection part (with low p-contact resistance and intermediate reflectance) and a spreading part (with high p-contact resistance and good reflectance) can enhance current injection and overall light reflectivity. Compared with reference LEDs with single reflectors, LEDs fabricated with Ag-based MHRs give higher output power by 8.9% and a reduction in forward voltage by 0.02 V (at 20 ntA), resulting in the improvement of the power efficiency by similar to 10%.
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