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Low temperature epoxy bonding for wafer level MEMS packaging

Authors
Kim, Yong-KookKim, Eun-KyungKim, Soo-WonJu, Byeong-Kwon
Issue Date
16-5월-2008
Publisher
ELSEVIER SCIENCE SA
Keywords
microelectromechanical system (MEMS); epoxy bonding; wafer level packaging; cu via; low temeprature
Citation
SENSORS AND ACTUATORS A-PHYSICAL, v.143, no.2, pp.323 - 328
Indexed
SCIE
SCOPUS
Journal Title
SENSORS AND ACTUATORS A-PHYSICAL
Volume
143
Number
2
Start Page
323
End Page
328
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/123531
DOI
10.1016/j.sna.2007.10.048
ISSN
0924-4247
Abstract
In this paper, we report on a technology for wafer-level MEMS packaging with vertical via holes and low temperature bonding using a patternable B stage epoxy. We fabricated via holes for vertical feed-throughs and then applied bottom-up copper electroplating to fill the via holes. For low temperature wafer level packaging, we used B-stage epoxy bonding in the sealing line. The optimal bonding parameters were 150 degrees C and 30 min. The tensile strength was about 15 MPa. Therefore, this packaging technology can be used for low temperature wafer level packaging for many MEMS devices. (c) 2007 Elsevier B.V. All rights reserved.
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