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Failure Analysis of Ge2Sb2Te5 Based Phase Change Memory
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hong, Sung-Hoon | - |
| dc.contributor.author | Lee, Heon | - |
| dc.date.accessioned | 2021-09-09T08:50:07Z | - |
| dc.date.available | 2021-09-09T08:50:07Z | - |
| dc.date.created | 2021-06-10 | - |
| dc.date.issued | 2008-05 | - |
| dc.identifier.issn | 0021-4922 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/123636 | - |
| dc.description.abstract | A phase change memory device, consisting of Ge2Sb2Te5 chalcogenide, a Mo electrode and a SiO2 dielectric layer, was fabricated in order to investigate the failure mechanism. During the pulsed mode switching of the device with a reset pulse (5.0 V, 90 ns) and a set pulse (1.5 V, 30 mu s), some devices failed to reset stuck. Those reset stuck devices showed a delaminated interface with decomposed Ge2Sb2Te5 chalcogenide. A thin layer of elemental Te or a Te rich phase was observed at the interface. A working device, switched over 600 times, shows no delamination between Ge2Sb2Te5 chalcogenide and the Mo electrode and no sign of decomposition. [DOI: 10.1143/JJAP.47.3372] | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | IOP PUBLISHING LTD | - |
| dc.title | Failure Analysis of Ge2Sb2Te5 Based Phase Change Memory | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Lee, Heon | - |
| dc.identifier.doi | 10.1143/JJAP.47.3372 | - |
| dc.identifier.scopusid | 2-s2.0-55049141125 | - |
| dc.identifier.wosid | 000256462500012 | - |
| dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.47, no.5, pp.3372 - 3375 | - |
| dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
| dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
| dc.citation.volume | 47 | - |
| dc.citation.number | 5 | - |
| dc.citation.startPage | 3372 | - |
| dc.citation.endPage | 3375 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordAuthor | phase change memory | - |
| dc.subject.keywordAuthor | Ge2Sb2Te5 | - |
| dc.subject.keywordAuthor | delamination | - |
| dc.subject.keywordAuthor | set stuck | - |
| dc.subject.keywordAuthor | reset stuck | - |
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