Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Failure Analysis of Ge2Sb2Te5 Based Phase Change Memory
- Authors
- Hong, Sung-Hoon; Lee, Heon
- Issue Date
- 5월-2008
- Publisher
- IOP PUBLISHING LTD
- Keywords
- phase change memory; Ge2Sb2Te5; delamination; set stuck; reset stuck
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.47, no.5, pp.3372 - 3375
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 47
- Number
- 5
- Start Page
- 3372
- End Page
- 3375
- ISSN
- 0021-4922
- Abstract
- A phase change memory device, consisting of Ge2Sb2Te5 chalcogenide, a Mo electrode and a SiO2 dielectric layer, was fabricated in order to investigate the failure mechanism. During the pulsed mode switching of the device with a reset pulse (5.0 V, 90 ns) and a set pulse (1.5 V, 30 mu s), some devices failed to reset stuck. Those reset stuck devices showed a delaminated interface with decomposed Ge2Sb2Te5 chalcogenide. A thin layer of elemental Te or a Te rich phase was observed at the interface. A working device, switched over 600 times, shows no delamination between Ge2Sb2Te5 chalcogenide and the Mo electrode and no sign of decomposition. [DOI: 10.1143/JJAP.47.3372]
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.