Characterization of AlGaN/GaN HEMT irradiated at 5 keV and 25 MeV proton energies

Abstract

AlGaN/GaN high electron mobility transistors(HEMT) were irradiated at 5 keV and 25 MeV proton energies. Current-voltages were compared before and after proton irradiation. As expected from simulation results, 5 keV protons severely damaged the transistors' performance compared to 25 MeV protons. Also, the effects of both low and higher fluencies were compared. Source-Drain currents were dramatically decreased under a higher fluency. Due to the extremely thin 2-Dimensional Electron Gas and the high displacement threshold energy, AlGaN/GaN HEMTs have great potential for applications in earth orbit.