Characterization of AlGaN/GaN HEMT irradiated at 5 keV and 25 MeV proton energies
DC Field | Value | Language |
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dc.contributor.author | Kim, Hong-Yeol | - |
dc.contributor.author | Ahn, Jaehui | - |
dc.contributor.author | Kim, Jihyun | - |
dc.contributor.author | Yun, Sang Pil | - |
dc.contributor.author | Lee, Jae Sang | - |
dc.date.accessioned | 2021-09-09T09:42:45Z | - |
dc.date.available | 2021-09-09T09:42:45Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-04 | - |
dc.identifier.issn | 1229-9162 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/123809 | - |
dc.description.abstract | AlGaN/GaN high electron mobility transistors(HEMT) were irradiated at 5 keV and 25 MeV proton energies. Current-voltages were compared before and after proton irradiation. As expected from simulation results, 5 keV protons severely damaged the transistors' performance compared to 25 MeV protons. Also, the effects of both low and higher fluencies were compared. Source-Drain currents were dramatically decreased under a higher fluency. Due to the extremely thin 2-Dimensional Electron Gas and the high displacement threshold energy, AlGaN/GaN HEMTs have great potential for applications in earth orbit. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | KOREAN ASSOC CRYSTAL GROWTH, INC | - |
dc.subject | ELECTRON-MOBILITY TRANSISTORS | - |
dc.subject | NITRIDE | - |
dc.subject | POWER | - |
dc.title | Characterization of AlGaN/GaN HEMT irradiated at 5 keV and 25 MeV proton energies | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.scopusid | 2-s2.0-44649183883 | - |
dc.identifier.wosid | 000257080800013 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CERAMIC PROCESSING RESEARCH, v.9, no.2, pp.155 - 157 | - |
dc.relation.isPartOf | JOURNAL OF CERAMIC PROCESSING RESEARCH | - |
dc.citation.title | JOURNAL OF CERAMIC PROCESSING RESEARCH | - |
dc.citation.volume | 9 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 155 | - |
dc.citation.endPage | 157 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001465851 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
dc.subject.keywordPlus | ELECTRON-MOBILITY TRANSISTORS | - |
dc.subject.keywordPlus | NITRIDE | - |
dc.subject.keywordPlus | POWER | - |
dc.subject.keywordAuthor | gallium nitride | - |
dc.subject.keywordAuthor | high electron mobility transistor | - |
dc.subject.keywordAuthor | proton | - |
dc.subject.keywordAuthor | irradiation | - |
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