Characterization of AlGaN/GaN HEMT irradiated at 5 keV and 25 MeV proton energies
- Authors
- Kim, Hong-Yeol; Ahn, Jaehui; Kim, Jihyun; Yun, Sang Pil; Lee, Jae Sang
- Issue Date
- 4월-2008
- Publisher
- KOREAN ASSOC CRYSTAL GROWTH, INC
- Keywords
- gallium nitride; high electron mobility transistor; proton; irradiation
- Citation
- JOURNAL OF CERAMIC PROCESSING RESEARCH, v.9, no.2, pp.155 - 157
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF CERAMIC PROCESSING RESEARCH
- Volume
- 9
- Number
- 2
- Start Page
- 155
- End Page
- 157
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/123809
- ISSN
- 1229-9162
- Abstract
- AlGaN/GaN high electron mobility transistors(HEMT) were irradiated at 5 keV and 25 MeV proton energies. Current-voltages were compared before and after proton irradiation. As expected from simulation results, 5 keV protons severely damaged the transistors' performance compared to 25 MeV protons. Also, the effects of both low and higher fluencies were compared. Source-Drain currents were dramatically decreased under a higher fluency. Due to the extremely thin 2-Dimensional Electron Gas and the high displacement threshold energy, AlGaN/GaN HEMTs have great potential for applications in earth orbit.
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Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
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