Fabrication of one-dimensional devices by a combination of AC dielectrophoresis and electrochemical deposition
DC Field | Value | Language |
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dc.contributor.author | Hong, S. H. | - |
dc.contributor.author | Kang, M. G. | - |
dc.contributor.author | Cha, H-Y | - |
dc.contributor.author | Son, M. H. | - |
dc.contributor.author | Hwang, J. S. | - |
dc.contributor.author | Lee, H. J. | - |
dc.contributor.author | Sull, S. H. | - |
dc.contributor.author | Hwang, S. W. | - |
dc.contributor.author | Whang, D. | - |
dc.contributor.author | Ahn, D. | - |
dc.date.accessioned | 2021-09-09T10:16:48Z | - |
dc.date.available | 2021-09-09T10:16:48Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-03-12 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/123905 | - |
dc.description.abstract | We demonstrate a hybrid process for fabricating one-dimensional wire devices. The process is a combination of an alignment procedure using dielectrophoresis and subsequent contact metal formation utilizing electrochemical deposition with non-toxic organic-based Au electrolytes. Several devices have been successfully made from GaN nanowires or multi-walled carbon nanotubes (MWCNTs) using our hybrid technique. We demonstrate that rapid thermal annealing improves the ohmic characteristics by five orders of magnitude in the case of the GaN devices and similar to 300% in the case of the MWCNT devices. One of the reasons for this improvement is enhanced gold wetting due to the reduction of grain size at the annealing temperature. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | WALLED CARBON NANOTUBES | - |
dc.subject | GAN NANOWIRES | - |
dc.subject | SINGLE | - |
dc.subject | ELECTRODES | - |
dc.subject | RESISTANCE | - |
dc.subject | ALIGNMENT | - |
dc.title | Fabrication of one-dimensional devices by a combination of AC dielectrophoresis and electrochemical deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Sull, S. H. | - |
dc.contributor.affiliatedAuthor | Hwang, S. W. | - |
dc.identifier.doi | 10.1088/0957-4484/19/10/105305 | - |
dc.identifier.scopusid | 2-s2.0-42549101791 | - |
dc.identifier.wosid | 000254174000007 | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.19, no.10 | - |
dc.relation.isPartOf | NANOTECHNOLOGY | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 19 | - |
dc.citation.number | 10 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | WALLED CARBON NANOTUBES | - |
dc.subject.keywordPlus | GAN NANOWIRES | - |
dc.subject.keywordPlus | SINGLE | - |
dc.subject.keywordPlus | ELECTRODES | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordPlus | ALIGNMENT | - |
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