Massive assembly of ZnO nanowire-based integrated devices
DC Field | Value | Language |
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dc.contributor.author | Kang, Juwan | - |
dc.contributor.author | Myung, Sung | - |
dc.contributor.author | Kim, Byeongju | - |
dc.contributor.author | Oh, Dongjin | - |
dc.contributor.author | Kim, Gyu Tae | - |
dc.contributor.author | Hong, Seunghun | - |
dc.date.accessioned | 2021-09-09T10:27:57Z | - |
dc.date.available | 2021-09-09T10:27:57Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-03-05 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/123912 | - |
dc.description.abstract | Although a directed assembly strategy has been utilized for the massive assembly of various nanowires and nanotubes (NWs/NTs), its application has usually been limited to rather small-diameter NWs/NTs prepared in solution. We report two complementary methods for the massive assembly of large-size ZnO nanowires (NWs). In the solution-phase method, ZnO NWs were assembled and aligned selectively onto negatively charged surface patterns in solution. In addition, the substrate bias voltage and capillary forces can be used to further enhance the adsorption rate and degree of alignment of ZnO NWs, respectively. In the direct-transfer method, a NW film grown on a solid substrate was placed in close proximity to a molecule-patterned substrate, and ultrasonic vibration was applied so that the NWs were directly transferred and aligned onto the patterned substrate. The solution-phase and direct-transfer methods are complementary to each other and suitable for the assembly of NWs prepared in solution and on solid substrates, respectively. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | WALLED CARBON NANOTUBES | - |
dc.subject | TEMPLATES | - |
dc.subject | NANOSTRUCTURES | - |
dc.subject | ELECTRONICS | - |
dc.subject | ALIGNMENT | - |
dc.subject | NANORODS | - |
dc.subject | DIODES | - |
dc.subject | GROWTH | - |
dc.subject | ARRAYS | - |
dc.title | Massive assembly of ZnO nanowire-based integrated devices | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Gyu Tae | - |
dc.identifier.doi | 10.1088/0957-4484/19/9/095303 | - |
dc.identifier.scopusid | 2-s2.0-42549115307 | - |
dc.identifier.wosid | 000254173900005 | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.19, no.9 | - |
dc.relation.isPartOf | NANOTECHNOLOGY | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 19 | - |
dc.citation.number | 9 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | WALLED CARBON NANOTUBES | - |
dc.subject.keywordPlus | TEMPLATES | - |
dc.subject.keywordPlus | NANOSTRUCTURES | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | ALIGNMENT | - |
dc.subject.keywordPlus | NANORODS | - |
dc.subject.keywordPlus | DIODES | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | ARRAYS | - |
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