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Electric generation of non-Abelian matrix Berry phases in n-type semiconductor quantum dots
- Authors
- Yang, S. -R. Eric; Hwang, N. Y.; Kim, S. C.; Kim, Y. J.; Park, P. S.
- Issue Date
- 3월-2008
- Publisher
- ELSEVIER
- Keywords
- non-Abelian; matrix; Berry; phase; quantum; dot; adiabatic
- Citation
- PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.40, no.5, pp.1241 - 1242
- Indexed
- SCIE
SCOPUS
- Journal Title
- PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
- Volume
- 40
- Number
- 5
- Start Page
- 1241
- End Page
- 1242
- ISSN
- 1386-9477
- Abstract
- Several different n-type nano semiconductor systems exhibit non-Abelian matrix Berry phases. Non-Abelian matrix Berry phases can be generated by an all electric means in II-VI and III-V n-type semiconductor quantum dots with spin-orbit coupling terms. Non-Abelian matrix Berry phases also appear in semiconductor quantum pumps, and pumped charges can be understood as a manifestation of a non-Abelian matrix Berry phase. In this paper we elucidate the common properties of these semiconductor systems that are responsible for the presence of non-Abelian matrix Berry phases. (C) 2007 Elsevier B.V. All rights reserved.
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