Selective growth of straight and zigzagged Ga1-xMnxN (0 <= x <= 0.05) nanowires and dependence of their electronic structure and magnetization on the Mn content
- Authors
- Hwang, Seon Oh; Kim, Han Sung; Park, Seong-Hun; Park, Jeunghee; Bae, Seung Yong; Kim, Bongsoo; Park, Ja Young; Lee, Gangho
- Issue Date
- 28-2월-2008
- Publisher
- AMER CHEMICAL SOC
- Citation
- JOURNAL OF PHYSICAL CHEMISTRY C, v.112, no.8, pp.2934 - 2942
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF PHYSICAL CHEMISTRY C
- Volume
- 112
- Number
- 8
- Start Page
- 2934
- End Page
- 2942
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/124058
- DOI
- 10.1021/jp7106632
- ISSN
- 1932-7447
- Abstract
- Straight and zigzagged Ga1-xMnxN (0 <= x <= 0.05) nanowires were selectively synthesized by the vapor transport method, using different growth temperature. They consisted of single-crystalline wurtzite GaN nanocrystals grown along the [1010] and [0001] directions for the straight and zigzagged morphologies, respectively. The lattice constant, c, decreases initially with increasing amount of Mn doping (x), and then increases as x increases above 0.03. X-ray photoelectron spectroscopy revealed that as the Mn content increases to x = 0.02, the binding energy of Ga 2p shifts to a higher energy, suggesting the possibility of hybridization between the Mn2+ ions and host defects. X-ray absorption spectroscopy and X-ray magnetic circular dichroism confirmed that the Mn2+ ions substitute into the tetrahedrally coordinated sites. The magnetization measurement revealed that all of these nanowires exhibited room-temperature ferromagnetic behaviors, most significantly for the straight nanowires grown with the [10 (1) over bar0] direction, having x = 0.02-0.03.
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Collections - Graduate School > Department of Advanced Materials Chemistry > 1. Journal Articles
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