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Microstructural evolution and dielectric properties of Cu-deficient and Cu-excess CaCu3Ti4O12 ceramics
- Issue Date
- 5-2월-2008
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- oxides; electronic materials; dielectric properties
- Citation
- MATERIALS RESEARCH BULLETIN, v.43, no.2, pp.284 - 291
- Indexed
- SCIE
SCOPUS
- Journal Title
- MATERIALS RESEARCH BULLETIN
- Volume
- 43
- Number
- 2
- Start Page
- 284
- End Page
- 291
- ISSN
- 0025-5408
- Abstract
- The microstructural evolution and dielectric properties of CaCu3-xTi4O12-x (3 - x = 2.8-3.05) ceramics were investigated. Normal grain growth behavior was observed at Cu/Ca <= 2.9, while abnormal grain growth was observed at Cu/Ca >= 2.95. A CuO-rich intergranular liquid phase at Cu/Ca >= 2.95 and angular grain morphology were the main reasons for abnormal grain growth. However, the abundant intergranular liquid at Cu/Ca = 3.05 significantly affected the relative dielectric permittivity and dielectric loss. The CuO composition is the key parameter that determines the microstructure and dielectric properties of CCTO ceramics. (c) 2007 Elsevier Ltd. All rights reserved.
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