Experimental evidence of ballistic transport in cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field-effect transistors
- Authors
- Cho, K. H.; Yeo, K. H.; Yeoh, Y. Y.; Suk, S. D.; Li, M.; Lee, J. M.; Kim, M. -S.; Kim, D. -W.; Park, D.; Hong, B. H.; Jung, Y. C.; Hwang, S. W.
- Issue Date
- 4-2월-2008
- Publisher
- AMER INST PHYSICS
- Keywords
- ballistic transport; nanowire; silicon
- Citation
- APPLIED PHYSICS LETTERS, v.92, no.5
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 92
- Number
- 5
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/124092
- DOI
- 10.1063/1.2840187
- ISSN
- 0003-6951
- Abstract
- We have investigated the electrical characteristics of cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field effect-transistors with 4 nm radius and the gate length ranging from 22 to 408 nm. We observed strong transconductance overshoot in the linear source-drain bias regime in the devices with channel length shorter than 46 nm. The mean free path estimated from the slope of the zero-field one dimensional ballistic resistance measured as a function of device length was almost the same as this length. (c) 2008 American Institute of Physics.
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