Growth of ZnO thin film on p-GaN/sapphire (0001) by simple hydrothermal technique
DC Field | Value | Language |
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dc.contributor.author | Sahoo, Trilochan | - |
dc.contributor.author | Kang, Eun-Sil | - |
dc.contributor.author | Kim, Myoung | - |
dc.contributor.author | Kannan, Vasudevan | - |
dc.contributor.author | Yu, Yeon-Tae | - |
dc.contributor.author | Shin, Dong-Chan | - |
dc.contributor.author | Kim, Tae-Geun | - |
dc.contributor.author | Lee, In-Hwan | - |
dc.date.accessioned | 2021-09-09T11:24:49Z | - |
dc.date.available | 2021-09-09T11:24:49Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2008-02-01 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/124099 | - |
dc.description.abstract | Zinc oxide (ZnO) heteroepitaxial thin films were successfully grown on p-GaN/sapphire (0001) by single-step hydrothermal route at a low temperature of 90 degrees C. Continuous ZnO thin films with c-axis orientation were grown in aqueous solution of zinc acetate di-hydrate and ammonium hydroxide. X-ray diffraction, scanning electron microscopy and room temperature photoluminescence were carried out for structural, morphological and optical property analysis. The as-grown ZnO films showed preferential growth along (0001) direction. The in-plane orientation between ZnO thin film and p-GaN buffer layer was found to be [11 (2) over bar0](ZnO)parallel to[11 (2) over bar0](GaN). Sharp luminescence peak centered at 377nm due to excitonic recombination from ZnO thin film was observed. (C) 2007 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | EPITAXIAL-GROWTH | - |
dc.subject | TEMPERATURE | - |
dc.subject | DEPOSITION | - |
dc.subject | MORPHOLOGY | - |
dc.subject | NANORODS | - |
dc.title | Growth of ZnO thin film on p-GaN/sapphire (0001) by simple hydrothermal technique | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae-Geun | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2007.11.026 | - |
dc.identifier.scopusid | 2-s2.0-37849019011 | - |
dc.identifier.wosid | 000253016900010 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.310, no.3, pp.570 - 574 | - |
dc.relation.isPartOf | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 310 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 570 | - |
dc.citation.endPage | 574 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | EPITAXIAL-GROWTH | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | MORPHOLOGY | - |
dc.subject.keywordPlus | NANORODS | - |
dc.subject.keywordAuthor | crystal structure | - |
dc.subject.keywordAuthor | X-ray diffraction | - |
dc.subject.keywordAuthor | hydrothermal crystal growth | - |
dc.subject.keywordAuthor | thin film | - |
dc.subject.keywordAuthor | zinc compounds | - |
dc.subject.keywordAuthor | semiconducting II-VI materials | - |
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