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A 6,13-bis(Triisopropylsilylethynyl) pentacene thin-film transistor using a spun-on inorganic gate-dielectric
- Authors
- Kwon, Jae-Hong; Seo, Jung-Hoon; Shin, Sang-Il; Kim, Kyung-Hwan; Choi, Dong Hoon; Kang, In Byeong; Kang, Hochul; Ju, Byeong-Kwon
- Issue Date
- Feb-2008
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- 6,13-bis(Triisopropylsilylethynyl) pentacene (TIPS-pentacene); organic electronics; organic thin-film transistor (OTFT); spin-on glass
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.55, no.2, pp.500 - 505
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 55
- Number
- 2
- Start Page
- 500
- End Page
- 505
- ISSN
- 0018-9383
- Abstract
- We present the latest results of the use of soluble materials such as organic semiconductors (OSCs) or gate-dielectrics for simplified processing of organic thin-film transistors (OTFTs). In this paper, we described our fabrication of a solution-processed OTFT with 6,13-bis(Triisopropylsilylethynyl) pentacene (TIPS-pentacene) as the OSC and siloxane-based spin-on glass (SOG) as the inorganic gate-dielectric. Also, synthesized TIPS-pentacene and SOG were examined for use as the OSC and gate-dielectric in an OTFT. From electrical measurements, we obtained device performance characteristics such as charge carrier mobility, threshold voltage, current ON/OFF ratio, and subthreshold swing, which were 6.48 x 10(-3) cm(2)/V.s, -13 V, similar to 100, and 1.83 V/dec, respectively.
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Related Researcher
- CHOI, DONG HOON
- College of Science (Department of Chemistry)