Multiple bit operation of MFISFET with Pt/SrBi2Ta2O9/Y2O3/Si gate structure
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Il Shim, S | - |
dc.contributor.author | Kwon, YS | - |
dc.contributor.author | Kim, IS | - |
dc.contributor.author | Kim, SI | - |
dc.contributor.author | Kim, YT | - |
dc.contributor.author | Park, JH | - |
dc.date.accessioned | 2021-09-09T12:24:06Z | - |
dc.date.available | 2021-09-09T12:24:06Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2004 | - |
dc.identifier.issn | 1058-4587 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/124342 | - |
dc.description.abstract | A single transistor type ferroelectric memory with multiple bit operation was presented. This cell has a metal ferroelectric insulator semiconductor field effect transistor structure. Y2O3 thin film was used as a buffer insulating layer to improve the memory characteristics and SrBi2Ta2O9 was used as a ferroelectric gate material. The multi-level characteristics of four levels with one order of drain current difference were measured according to the writing voltage step of two volt. This multi-level memory cell enables to increase the density of memory in the same space and lower the cost. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | TAYLOR & FRANCIS LTD | - |
dc.subject | SEMICONDUCTOR | - |
dc.subject | METAL | - |
dc.subject | Y2O3 | - |
dc.title | Multiple bit operation of MFISFET with Pt/SrBi2Ta2O9/Y2O3/Si gate structure | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, JH | - |
dc.identifier.doi | 10.1080/10584580490893079 | - |
dc.identifier.scopusid | 2-s2.0-33751252600 | - |
dc.identifier.wosid | 000226089500024 | - |
dc.identifier.bibliographicCitation | INTEGRATED FERROELECTRICS, v.65, pp.203 - 211 | - |
dc.relation.isPartOf | INTEGRATED FERROELECTRICS | - |
dc.citation.title | INTEGRATED FERROELECTRICS | - |
dc.citation.volume | 65 | - |
dc.citation.startPage | 203 | - |
dc.citation.endPage | 211 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | METAL | - |
dc.subject.keywordPlus | Y2O3 | - |
dc.subject.keywordAuthor | ferroelectric | - |
dc.subject.keywordAuthor | MFISFET | - |
dc.subject.keywordAuthor | multi-level | - |
dc.subject.keywordAuthor | SBT | - |
dc.subject.keywordAuthor | FRAM | - |
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