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Fabrication of quantum dot transistors incorporating a single self-assembled quantum dot
- Issue Date
- 5월-2000
- Publisher
- ELSEVIER
- Keywords
- self-assembled quantum dot; quantum dot transistor; InAs; transport
- Citation
- PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.7, no.3-4, pp.430 - 434
- Indexed
- SCIE
SCOPUS
- Journal Title
- PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
- Volume
- 7
- Number
- 3-4
- Start Page
- 430
- End Page
- 434
- ISSN
- 1386-9477
- Abstract
- We report on the fabrication and the characterization of quantum dot transistors incorporating a single self-assembled quantum dot. The current-voltage characteristics exhibit clear staircase structures at room temperature. They are attributed to electron tunneling through the quantized energy levels of a single quantum dot. (C) 2000 Elsevier Science B.V. All rights reserved.
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