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Shielding region effects on a trench gate IGBT
- Authors
- Lee, Jong-Seok; Kang, Ey-Goo; Sung, Man Young
- Issue Date
- 1월-2008
- Publisher
- ELSEVIER SCI LTD
- Keywords
- trench; IGBT; breakdown voltage; on-state voltage drop; shielding region
- Citation
- MICROELECTRONICS JOURNAL, v.39, no.1, pp.57 - 62
- Indexed
- SCIE
SCOPUS
- Journal Title
- MICROELECTRONICS JOURNAL
- Volume
- 39
- Number
- 1
- Start Page
- 57
- End Page
- 62
- ISSN
- 0026-2692
- Abstract
- In this paper we introduced the shielding region concept in order to relieve the electric field concentrated on the trench bottom corner. The shielded trench gate insulated gate bipolar transistor (IGBT) is a trench gate IGBT with a P+ shielding region located in the bottom of a trench gate. By simulation results, we verified that a shielding region reduced the electric fields not only in the gate oxide but also in the P-base region. Compared with conventional trench gate IGBT, about 33% increment of forward breakdown voltages are achieved, but little forward voltage drop, which causes on-state loss to be increased by about 0.06 V in the shielded trench gate IGBT. (c) 2007 Elsevier Ltd. All rights reserved.
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