Silicon on insulator (SOI) wafer development using plasma source ion implantation (PSII) technology

Abstract

PSII (Plasma Source Ion Implantation) using high density pulsed ICP source was employed to implant oxygen ions in Si wafer. The PSII technique can achieve a nominal oxygen dose of 3 x 10(17) atoms/cm(2) in implantation time of about 20min. In order to prevent oxidation of SOI layer during high temperature annealing, the wafer was capped with 2,000 angstrom Si3N4 by PECVD. Cross-sectional TEM showed that continuous 500 angstrom thick buried oxide layer was formed with 300 angstrom thick top silicon layer in the sample. This study showed the possibility of SOI fabrication using the plasma source ion implantation with pulsed ICP source.