A Nonvolatile Refresh Scheme Adopted 1T-FeRAM for Alternative 1T-DRAMA Nonvolatile Refresh Scheme Adopted 1T-FeRAM for Alternative 1T-DRAM
- Other Titles
- A Nonvolatile Refresh Scheme Adopted 1T-FeRAM for Alternative 1T-DRAM
- Authors
- Hee-Bok Kang; Bok-Gil Choi; Man Young Sung
- Issue Date
- 2008
- Publisher
- 대한전자공학회
- Keywords
- 1T1C DRAM; floating body cell (FBC) 1T DRAM; 1T-gain DRAM; FET-type 1T-FeRAM; nonvolatile refresh scheme
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.8, no.1, pp.98 - 103
- Indexed
- KCI
OTHER
- Journal Title
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- Volume
- 8
- Number
- 1
- Start Page
- 98
- End Page
- 103
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/124914
- ISSN
- 1598-1657
- Abstract
- 1T1C DRAM has been facing technological and physical constraints that make more difficult their further scaling. Thus there are much industrial interests for alternative technologies that exploit new devices and concepts to go beyond the 1T1C DRAM technology, to allow better scaling, and to enlarge the memory performance. The technologies of DRAM cell are changing from 1T1C cell type to capacitorless 1T-gain cell type for more scalable cell size. But floating body cell (FBC) of 1T-gain DRAM has weak retention properties than 1T1C DRAM. FET-type 1TFeRAM is not adequate for long term nonvolatile applications, but could be a good alternative for the short term retention applications of DRAM. The proposed nonvolatile refresh scheme is based on utilizing the short nonvolatile retention properties of 1T-FeRAM in both after power-off and power-on operation condition.
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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