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Photoluminescence of Neutron-irradiated GaN Films and NanowiresPhotoluminescence of Neutron-irradiated GaN Films and Nanowires
- Other Titles
- Photoluminescence of Neutron-irradiated GaN Films and Nanowires
- Authors
- Hojun Seong; Donghyuk Yeom; Hyunsuk Kim; Kyoungah Cho; 김상식
- Issue Date
- 2008
- Publisher
- 한국전기전자재료학회
- Keywords
- Neutron-transmutation-doping(NTD); GaN; Nanowires; Photoluminescence(PL); Neutron-transmutation-doping(NTD); GaN; Nanowires; Photoluminescence(PL)
- Citation
- 전기전자재료학회논문지, v.21, no.7, pp.603 - 609
- Indexed
- KCI
- Journal Title
- 전기전자재료학회논문지
- Volume
- 21
- Number
- 7
- Start Page
- 603
- End Page
- 609
- ISSN
- 1226-7945
- Abstract
- Photoluminescence (PL) of neutron-irradiated GaN films and nanowires is investigated in this study. The GaN films and nanowires were irradiated by neutron beams in air at room temperature, and the neutron-irradiated films and nanowires were annealed in an atmosphere of NH3 at temperatures ranging from 500 to 1100 °C. The line-shapes of the PL spectra taken from the neutron-irradiated GaN films and nanowires were changed differently with increasing annealing temperature. In this study, light-emitting centers created in the neutron-irradiated GaN films and nanowires are examined and their origins are discussed. In addition, it is suggested here that the neutron-transmutation-doping is a simple and useful means of homogeneous impurity doping into nanowires with control of the doping concentration.
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