Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers
- Authors
- Qian, F.; Li, Y.; Gradečak, S.; Park, H.-G.; Dong, Y.; Ding, Y.; Wang, Z.L.; Lieber, C.M.
- Issue Date
- 2008
- Publisher
- Nature Publishing Group
- Citation
- Nature Materials, v.7, no.9, pp.701 - 706
- Indexed
- SCOPUS
- Journal Title
- Nature Materials
- Volume
- 7
- Number
- 9
- Start Page
- 701
- End Page
- 706
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/125304
- DOI
- 10.1038/nmat2253
- ISSN
- 1476-1122
- Abstract
- Rational design and synthesis of nanowires with increasingly complex structures can yield enhanced and/or novel electronic and photonic functions. For example, Ge/Si core/shell nanowires have exhibited substantially higher performance as field-effect transistors and low-temperature quantum devices compared with homogeneous materials, and nano-roughened Si nanowires were recently shown to have an unusually high thermoelectric figure of merit. Here, we report the first multi-quantum-well (MQW) core/shell nanowire heterostructures based on well-defined III-nitride materials that enable lasing over a broad range of wavelengths at room temperature. Transmission electron microscopy studies show that the triangular GaN nanowire cores enable epitaxial and dislocation-free growth of highly uniform (InGaN/GaN)(n) quantum wells with n≤3, 13 and 26 and InGaN well thicknesses of 1-3nm. Optical excitation of individual MQW nanowire structures yielded lasing with InGaN quantum-well composition-dependent emission from 365 to 494nm, and threshold dependent on quantum well number, n. Our work demonstrates a new level of complexity in nanowire structures, which potentially can yield free-standing injection nanolasers. © 2008 Macmillan Publishers Limited. All rights reserved.
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