Fabrication and characterization of modulation-doped-field-effect-transistors with antidot-patterned passivation layers
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hwang, SW | - |
dc.contributor.author | Yu, YS | - |
dc.contributor.author | Ha, WI | - |
dc.contributor.author | Kim, TG | - |
dc.contributor.author | Han, CK | - |
dc.contributor.author | Park, JH | - |
dc.contributor.author | Kim, MS | - |
dc.contributor.author | Kim, EK | - |
dc.contributor.author | Min, SK | - |
dc.date.accessioned | 2021-09-09T18:35:51Z | - |
dc.date.available | 2021-09-09T18:35:51Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 1996-09-23 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/126170 | - |
dc.description.abstract | A gate passivation technique for modulation-doped-field-effect-transistors has been proposed and demonstrated. This technique incorporates an antidot-patterned (net-shaped), polymer passivation layer deposited between the gate metal and the heterojunction wafer. Characterization results of the device with the patterned passivation layer show that independent engineering of the threshold voltage and the transconductance has been achieved. (C) 1996 American Institute of Physics. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Fabrication and characterization of modulation-doped-field-effect-transistors with antidot-patterned passivation layers | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, JH | - |
dc.identifier.doi | 10.1063/1.117623 | - |
dc.identifier.scopusid | 2-s2.0-0037800562 | - |
dc.identifier.wosid | A1996VH79500035 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.69, no.13, pp.1924 - 1926 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 69 | - |
dc.citation.number | 13 | - |
dc.citation.startPage | 1924 | - |
dc.citation.endPage | 1926 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.