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Fabrication and characterization of modulation-doped-field-effect-transistors with antidot-patterned passivation layers

Authors
Hwang, SWYu, YSHa, WIKim, TGHan, CKPark, JHKim, MSKim, EKMin, SK
Issue Date
23-9월-1996
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.69, no.13, pp.1924 - 1926
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
69
Number
13
Start Page
1924
End Page
1926
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/126170
DOI
10.1063/1.117623
ISSN
0003-6951
Abstract
A gate passivation technique for modulation-doped-field-effect-transistors has been proposed and demonstrated. This technique incorporates an antidot-patterned (net-shaped), polymer passivation layer deposited between the gate metal and the heterojunction wafer. Characterization results of the device with the patterned passivation layer show that independent engineering of the threshold voltage and the transconductance has been achieved. (C) 1996 American Institute of Physics.
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