Dislocations introduced in n-GaN at room temperature cause conductivity inversion
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yakimov, Eugene B. | - |
dc.contributor.author | Vergeles, Pavel S. | - |
dc.contributor.author | Polyakov, Alexander Y. | - |
dc.contributor.author | Shchemerov, Ivan, V | - |
dc.contributor.author | Chernyh, A., V | - |
dc.contributor.author | Vasilev, A. A. | - |
dc.contributor.author | Kochkova, A., I | - |
dc.contributor.author | Lee, In-Hwan | - |
dc.contributor.author | Pearton, S. J. | - |
dc.date.accessioned | 2021-11-16T09:40:16Z | - |
dc.date.available | 2021-11-16T09:40:16Z | - |
dc.date.created | 2021-08-30 | - |
dc.date.issued | 2021-10-05 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/127617 | - |
dc.description.abstract | Dislocations were introduced by scratching at room temperature of the surface of n-GaN films grown by Metalorganic Chemical Vapor Deposition (MOCVD) on basal plane sapphire. The dislocations were observed to propagate from the scratch along the <11-20> directions along several slip systems and form a region with high dislocation density extending by 30-40 & micro;m on each side of the scratch. The regions with en-hanced dislocation density were characterized by a strong decrease of intensity of bandedge cath-odoluminescence (CL) band at 368 nm, an emergence of the dislocation-related band at 400 nm wavelength, and a strong increase in intensity of the yellow CL band related to defects. Capacitance-voltage and current-voltage measurements in the dark and under illumination performed as a function of tem-perature indicates that the region with enhanced dislocation density is converted to p-type. Measurements of current versus temperature, admittance spectra, and Deep Level Transient Spectroscopy (DLTS) allowed for the first time to determine the energy position of dislocation-related acceptors level near Ev+ 0.35 eV and to estimate their concentration. (c) 2021 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | BEAM-INDUCED-CURRENT | - |
dc.subject | DEEP TRAPS | - |
dc.subject | INDENTATION | - |
dc.subject | CATHODOLUMINESCENCE | - |
dc.subject | LUMINESCENCE | - |
dc.subject | DEFECTS | - |
dc.title | Dislocations introduced in n-GaN at room temperature cause conductivity inversion | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, In-Hwan | - |
dc.identifier.doi | 10.1016/j.jallcom.2021.160281 | - |
dc.identifier.scopusid | 2-s2.0-85105818768 | - |
dc.identifier.wosid | 000660460500003 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.877 | - |
dc.relation.isPartOf | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 877 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.subject.keywordPlus | BEAM-INDUCED-CURRENT | - |
dc.subject.keywordPlus | DEEP TRAPS | - |
dc.subject.keywordPlus | INDENTATION | - |
dc.subject.keywordPlus | CATHODOLUMINESCENCE | - |
dc.subject.keywordPlus | LUMINESCENCE | - |
dc.subject.keywordPlus | DEFECTS | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | Dislocations | - |
dc.subject.keywordAuthor | Defect states | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.