Dislocations introduced in n-GaN at room temperature cause conductivity inversion
- Authors
- Yakimov, Eugene B.; Vergeles, Pavel S.; Polyakov, Alexander Y.; Shchemerov, Ivan, V; Chernyh, A., V; Vasilev, A. A.; Kochkova, A., I; Lee, In-Hwan; Pearton, S. J.
- Issue Date
- 5-10월-2021
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- GaN; Dislocations; Defect states
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.877
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 877
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/127617
- DOI
- 10.1016/j.jallcom.2021.160281
- ISSN
- 0925-8388
- Abstract
- Dislocations were introduced by scratching at room temperature of the surface of n-GaN films grown by Metalorganic Chemical Vapor Deposition (MOCVD) on basal plane sapphire. The dislocations were observed to propagate from the scratch along the <11-20> directions along several slip systems and form a region with high dislocation density extending by 30-40 & micro;m on each side of the scratch. The regions with en-hanced dislocation density were characterized by a strong decrease of intensity of bandedge cath-odoluminescence (CL) band at 368 nm, an emergence of the dislocation-related band at 400 nm wavelength, and a strong increase in intensity of the yellow CL band related to defects. Capacitance-voltage and current-voltage measurements in the dark and under illumination performed as a function of tem-perature indicates that the region with enhanced dislocation density is converted to p-type. Measurements of current versus temperature, admittance spectra, and Deep Level Transient Spectroscopy (DLTS) allowed for the first time to determine the energy position of dislocation-related acceptors level near Ev+ 0.35 eV and to estimate their concentration. (c) 2021 Elsevier B.V. All rights reserved.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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