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Graphene quantum dot-embedded perovskite photodetectors with fast response and enhanced sensitivity through bulk defect passivation

Authors
Lee, David SunghwanYun, Jeong-SeobHeo, Jin HyuckKim, Bong WooIm, Sang Hyuk
Issue Date
25-8월-2021
Publisher
ELSEVIER SCIENCE INC
Keywords
Fast response; Sensitivity; Bulk defect passivation; Graphene quantum dots; Perovskites; Photodetectors
Citation
JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY, v.100, pp.383 - 389
Indexed
SCIE
SCOPUS
KCI
Journal Title
JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY
Volume
100
Start Page
383
End Page
389
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/127650
DOI
10.1016/j.jiec.2021.05.001
ISSN
1226-086X
Abstract
Graphene quantum dots (GQDs) synthesized by single phase solution chemistry are embedded in metal halide perovskite (MHP) films because they can act as passivating defects that are present throughout the MHP film, not only at the interface but also throughout the bulk of the film. The perovskite photodetectors composed of indium-doped tin oxide/SnO2/MHP with embedded GQDs/poly triarylamine/Au have the reduced dark current, increased detectivity, and fasted response speed due to lower trap density throughout the bulk MHP layer. (C) 2021 The Korean Society of Industrial and Engineering Chemistry. Published by Elsevier B.V. All rights reserved.
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