Graphene quantum dot-embedded perovskite photodetectors with fast response and enhanced sensitivity through bulk defect passivation
- Authors
- Lee, David Sunghwan; Yun, Jeong-Seob; Heo, Jin Hyuck; Kim, Bong Woo; Im, Sang Hyuk
- Issue Date
- 25-8월-2021
- Publisher
- ELSEVIER SCIENCE INC
- Keywords
- Fast response; Sensitivity; Bulk defect passivation; Graphene quantum dots; Perovskites; Photodetectors
- Citation
- JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY, v.100, pp.383 - 389
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY
- Volume
- 100
- Start Page
- 383
- End Page
- 389
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/127650
- DOI
- 10.1016/j.jiec.2021.05.001
- ISSN
- 1226-086X
- Abstract
- Graphene quantum dots (GQDs) synthesized by single phase solution chemistry are embedded in metal halide perovskite (MHP) films because they can act as passivating defects that are present throughout the MHP film, not only at the interface but also throughout the bulk of the film. The perovskite photodetectors composed of indium-doped tin oxide/SnO2/MHP with embedded GQDs/poly triarylamine/Au have the reduced dark current, increased detectivity, and fasted response speed due to lower trap density throughout the bulk MHP layer. (C) 2021 The Korean Society of Industrial and Engineering Chemistry. Published by Elsevier B.V. All rights reserved.
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